IGBT 600V 6A 33W TO252AA Product overview: HGTD3N60C3S from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6A, 33W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 6A, 33W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTD3N60C3S can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204793-HGTD3N60C3S
Packaging: Reel - TR
Mounting: SMD (SMT)
Input Type: Standard
Gate Charge: 10.8nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: TO-252AA
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 33W
Pulsed Collector Current: 24A
Collector-emitter saturation voltage(Max): 2V @ 15V, 3A
Total Switching Energy(Ets): 85μJ (on), 245μJ (off)
Testing Conditions: 480V, 3A, 82 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-HGTD3N60C3S | 204793-HGTD3N60C3S |
| Product Name | 600V 6A 33W IGBT Transistor | IGBTs - Single - HGTD3N60C3S |
| PD | 33000 milliwatts | 33000 milliwatts |
