onsemi IGBTs - Single - HGT1S7N60C3DS9A HGT1S7N60C3DS9A

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 068074-HGT1S7N60C3DS9A
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 37ns
Input Type: Standard
Gate Charge: 23nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: TO-263AB
Maximum Current Collector: 14A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 60W
Pulsed Collector Current: 56A
Collector-emitter saturation voltage(Max): 2V @ 15V, 7A
Total Switching Energy(Ets): 165μJ (on), 600μJ (off)
Testing Conditions: 480V, 7A, 50 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

IGBT 600V 14A 60W Surface Mount D²PAK (TO-263)

IGBT 600V 14A 60W TO263AB Product overview: HGT1S7N60C3DS9A from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 14A, 60W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 14A, 60W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGT1S7N60C3DS9A can be used for catalog matching and distributor lookup.