onsemi IGBTs - Single - HGT1S3N60A4DS9A HGT1S3N60A4DS9A

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1043304-HGT1S3N60A4DS9A
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 29ns
Input Type: Standard
Gate Charge: 21nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263AB
Maximum Current Collector: 17A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 70W
Pulsed Collector Current: 40A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 3A
Total Switching Energy(Ets): 37μJ (on), 25μJ (off)
Turn-on and Turn-off delay time: 6ns/73ns
Testing Conditions: 390V, 3A, 50 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

IGBT 600V 17A 70W Surface Mount D²PAK (TO-263)

N-CHANNEL IGBT Product overview: HGT1S3N60A4DS9A from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGT1S3N60A4DS9A can be used for catalog matching and distributor lookup.