onsemi 600V 17A 70W IGBT Transistor HGT1S3N60A4DS

Description
IGBT 600V 17A 70W D2PAK Product overview: HGT1S3N60A4DS from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 17A, 70W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 17A, 70W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGT1S3N60A4DS can be used for catalog matching and distributor lookup.
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Description
IGBT 600V 17A 70W D2PAK Product overview: HGT1S3N60A4DS from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 17A, 70W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 17A, 70W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGT1S3N60A4DS can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
600V 17A 70W IGBT Transistor
279-HGT1S3N60A4DS
600V 17A 70W IGBT Transistor 279-HGT1S3N60A4DS
IGBT 600V 17A 70W D2PAK Product overview: HGT1S3N60A4DS from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 17A, 70W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 17A, 70W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGT1S3N60A4DS can be used for catalog matching and distributor lookup.

IGBT 600V 17A 70W D2PAK Product overview: HGT1S3N60A4DS from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 17A, 70W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 17A, 70W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGT1S3N60A4DS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - HGT1S3N60A4DS - 45264-HGT1S3N60A4DS - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - HGT1S3N60A4DS
45264-HGT1S3N60A4DS
IGBTs - Single - HGT1S3N60A4DS 45264-HGT1S3N60A4DS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 45264-HGT1S3N60A4DS Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 29ns Input Type: Standard Gate Charge: 21nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263AB Maximum Current Collector: 17A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 70W Pulsed Collector Current: 40A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 3A Total Switching Energy(Ets): 37μJ (on), 25μJ (off) Turn-on and Turn-off delay time: 6ns/73ns Testing Conditions: 390V, 3A, 50 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 45264-HGT1S3N60A4DS
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 29ns
Input Type: Standard
Gate Charge: 21nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263AB
Maximum Current Collector: 17A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 70W
Pulsed Collector Current: 40A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 3A
Total Switching Energy(Ets): 37μJ (on), 25μJ (off)
Turn-on and Turn-off delay time: 6ns/73ns
Testing Conditions: 390V, 3A, 50 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 279-HGT1S3N60A4DS 45264-HGT1S3N60A4DS
Product Name 600V 17A 70W IGBT Transistor IGBTs - Single - HGT1S3N60A4DS
PD 70000 milliwatts 70000 milliwatts
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