onsemi IGBTs - Single - HGT1S2N120CN HGT1S2N120CN

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1043303-HGT1S2N120CN
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT
Input Type: Standard
Gate Charge: 30nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-262
Maximum Current Collector: 13A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 104W
Pulsed Collector Current: 20A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 2.6A
Total Switching Energy(Ets): 96μJ (on), 355μJ (off)
Turn-on and Turn-off delay time: 25ns/205ns
Testing Conditions: 960V, 2.6A, 51 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

IGBT NPT 1200V 13A 104W Through Hole TO-262

Trans IGBT Chip N-CH 1.2KV 13A 3-Pin(3+Tab) TO-262 Rail Product overview: HGT1S2N120CN from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2KV, 13A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1.2KV, 13A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGT1S2N120CN can be used for catalog matching and distributor lookup.