onsemi Single IGBTs HGT1S14N36G3VLS

Description
IGBT 390V 18A 100W Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
IGBT 390V 18A 100W Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - HGT1S14N36G3VLS-ND - DigiKey
Thief River Falls, MN, United States
IGBT 390V 18A 100W Surface Mount D²PAK (TO-263)

IGBT 390V 18A 100W Surface Mount D²PAK (TO-263)

Buy Now Datasheet
IGBTs - Single - HGT1S14N36G3VLS - 1180342-HGT1S14N36G3VLS - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - HGT1S14N36G3VLS
1180342-HGT1S14N36G3VLS
IGBTs - Single - HGT1S14N36G3VLS 1180342-HGT1S14N36G3VLS
Manufacturer: ON Semiconductor Win Source Part Number: 1180342-HGT1S14N36G3 VLS Packaging: Tube Mounting Style: SMD Input Type: Logic Gate Charge: 24nC Test Condition: 300V, 7A, 25Ohm, 5V Categories: Discrete Semiconductor Products Supplier Device Package: TO-263AB Status: Obsolete Temperature Range - Operating: -40°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Current - Collector (Ic) (Maximum): 18A Voltage - Collector Emitter Breakdown (Maximum): 390V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Maximum Power: 100W Vce(on) (Maximum) at Vge, Ic: 2.2V at 5V, 14A Td (on/off) at 25°C: -/7μs

Manufacturer: ON Semiconductor
Win Source Part Number: 1180342-HGT1S14N36G3VLS
Packaging: Tube
Mounting Style: SMD
Input Type: Logic
Gate Charge: 24nC
Test Condition: 300V, 7A, 25Ohm, 5V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-263AB
Status: Obsolete
Temperature Range - Operating: -40°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current - Collector (Ic) (Maximum): 18A
Voltage - Collector Emitter Breakdown (Maximum): 390V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Maximum Power: 100W
Vce(on) (Maximum) at Vge, Ic: 2.2V at 5V, 14A
Td (on/off) at 25°C: -/7μs

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Transistor - 32944860 - Radwell International
Willingboro, NJ, United States
Transistor
32944860
Transistor 32944860
TRANSISTOR, 14A 360V TO-263AB. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, 14A 360V TO-263AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - HGT1S14N36G3VLS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
HGT1S14N36G3VLS
Discrete Semiconductor Products - Transistors - IGBTs HGT1S14N36G3VLS
IGBT 390V 18A 100W TO263AB

IGBT 390V 18A 100W TO263AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number HGT1S14N36G3VLS-ND 1180342-HGT1S14N36G3VLS 32944860 HGT1S14N36G3VLS
Product Name Single IGBTs IGBTs - Single - HGT1S14N36G3VLS Transistor Discrete Semiconductor Products - Transistors - IGBTs
TJ -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F)
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