onsemi Single IGBTs HGT1S10N120BNS

IGBT NPT 1200V 35A 298W Surface Mount D²PAK (TO-263)

1200V IGBT, 35A, TO-263AB, 312W PD Product overview: HGT1S10N120BNS from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 35A, 312W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 35A, 312W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGT1S10N120BNS can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1180339-HGT1S10N120BNS
Packaging: Tube
Mounting Style: SMD
IGBT Type: NPT
Current - Collector Pulsed (Icm): 80A
Switching Energy: 320μJ (on), 800μJ (off)
Input Type: Standard
Gate Charge: 100nC
Test Condition: 960V, 10A, 10Ohm, 15V
Family Name: HGT1S10N120BNS
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-263AB
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current - Collector (Ic) (Maximum): 35A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Alternative Parts (Cross-Reference): IXDA20N120ASSN; IXDA20N120AS; IXGA20N120B3; IXGA15N120B;
Introduction Date: January 08, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Family Part Number: HGT1S10N120
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Maximum Power: 298W
Vce(on) (Maximum) at Vge, Ic: 2.7V at 15V, 10A
Td (on/off) at 25°C: 23ns/165ns