Trans IGBT Chip N-CH 600V 110A 4-Pin SOT-227 Rail Product overview: HGT1N40N60A4D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 110A. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 600V, 110A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-HGT1N40N60A4D can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1005452-HGT1N40N60A4
Mounting: Chassis Mount
Configuration: Single
Input: Standard
NTC Thermistor: No
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-227
Maximum Current Collector: 110A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Collector Cut-off Current(Max): 250μA
Maximum Power Dissipation: 298W
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 40A
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
IGBT MOD 600V 110A 298W SOT227B
IGBT MOD 600V 110A 298W SOT227B
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 297-HGT1N40N60A4D | 1005452-HGT1N40N60A4D | HGT1N40N60A4D | HGT1N40N60A4D |
| Product Name | 600V 110A IGBT Transistor | IGBTs - Modules - HGT1N40N60A4D | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Modules |
| PD | 298000 milliwatts | 298000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| VCE(on) | 2.7 volts |
