onsemi DIP MOSFET Transistor H11F1

Description
MOSFET Output Optocouplers DIP-6 ANALOG FET Product overview: H11F1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, DIP, MOSFET Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11F1 can be used for catalog matching and distributor lookup.
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Description
MOSFET Output Optocouplers DIP-6 ANALOG FET Product overview: H11F1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, DIP, MOSFET Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11F1 can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The H11F1 is a photo FET optocoupler designed for isolation of analog signals, featuring a gallium-aluminum-arsenide IRED coupled to a symmetrical bilateral silicon photo-detector. It is housed in a dual in-line package with 6 pins and a lead spacing of 0.2 in (5.08 mm). The device offers an on-state resistance of 200 Ω at 16 mA input current, 60 V peak-to-peak signal capability, and off-state resistance exceeding 300 MΩ. It provides 5300 Vrms input-output isolation voltage and 10¹¹ Ω isolation resistance. The FET output exhibits ≤ 0.1% resistance non-linearity, ≤ 15 pF shunt capacitance, and turn-on/turn-off times of 25 µs. It is UL and VDE recognized for safety compliance.

Datasheet Summary
Powered by GS/AI

The H11F1 is a photo FET optocoupler designed for isolation of analog signals, featuring a gallium-aluminum-arsenide IRED coupled to a symmetrical bilateral silicon photo-detector. It is housed in a dual in-line package with 6 pins and a lead spacing of 0.2 in (5.08 mm). The device offers an on-state resistance of 200 Ω at 16 mA input current, 60 V peak-to-peak signal capability, and off-state resistance exceeding 300 MΩ. It provides 5300 Vrms input-output isolation voltage and 10¹¹ Ω isolation resistance. The FET output exhibits ≤ 0.1% resistance non-linearity, ≤ 15 pF shunt capacitance, and turn-on/turn-off times of 25 µs. It is UL and VDE recognized for safety compliance.

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
DIP MOSFET Transistor
903-H11F1
DIP MOSFET Transistor 903-H11F1
MOSFET Output Optocouplers DIP-6 ANALOG FET Product overview: H11F1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, DIP, MOSFET Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11F1 can be used for catalog matching and distributor lookup.

MOSFET Output Optocouplers DIP-6 ANALOG FET Product overview: H11F1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, DIP, MOSFET Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11F1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 903-H11F1
Product Name DIP MOSFET Transistor
PD 300 milliwatts
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