The H11AA2SD is a surface-mount optocoupler with two inverse-parallel gallium arsenide infrared LEDs driving a silicon phototransistor output, designed for AC line monitoring and unknown-polarity DC sensing. It features built-in reverse polarity protection and comes in a 6-pin SMD package with a lead spacing of 0.4 inch. The device meets Underwriters Laboratory (UL) recognition File #E90700 and has an isolation voltage of 5300 Vrms. The current transfer ratio ranges from 10% to 20% at a forward current of ±10 mA and collector-emitter voltage of 10 V. Maximum operating temperature is 100°C, and storage temperature is -55°C to 150°C. The lead soldering temperature is 260°C for 10 seconds.
OPTOISO 5.3KV TRANS W/BASE 6SMD / Optoisolator Transistor with Base Output 5300Vrms 1 Channel 6-SMD Product overview: H11AA2SD from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 5.3KV. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, SMD, 5.3KV. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-H11AA2SD can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 297-H11AA2SD |
| Product Name | SMD 5.3KV IGBT Transistor |
| TJ | -55 to 100 C (-67 to 212 F) |
