The H11A817A is a 4-pin dual in-line package optocoupler consisting of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It features a collector-emitter breakdown voltage of 70V, a maximum continuous collector current of 50mA, and an input-output isolation voltage of 5300 Vac(rms). The current transfer ratio is specified between 80% and 160% at an input current of 5mA and collector-emitter voltage of 5V. It operates over a temperature range of -55°C to +100°C and complies with VDE 0884 safety standards. The device is designed for applications including power supply regulators, digital logic inputs, and microprocessor interfaces.
5kV Optocoupler, 70V VCEO, 50mA FC, PDIP, Through Hole Product overview: H11A817A from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 5kV, 70V, 50mA. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 5kV, 70V, 50mA, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A817A can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A817A |
| Product Name | Through-Hole 5kV 70V 50mA Bipolar Transistor |
| IC(max) | 50 milliamps |
