The H11A1TM is a general-purpose 6-pin phototransistor optocoupler in a through-hole package with 0.4" lead spacing. It consists of a gallium arsenide infrared LED driving a silicon phototransistor, providing electrical isolation between input and output. The device supports an input forward current of up to 60 mA, a collector-emitter voltage of 30 V, and operates over a temperature range of -40°C to +100°C. It meets UL and VDE isolation standards with an isolation voltage of 7500 Vac(pk) and isolation resistance of 10^11 Ω. Current transfer ratio (CTR) is specified at a minimum of 50% with an input current of 10 mA and collector-emitter voltage of 10 V. Turn-on and turn-off times are typically 2 µs with a 100 Ω load resistor. The device is certified to UL 94 V-0 and AEC-Q200.
Transistor Output Optocouplers Optocoupler Phototransistor Product overview: H11A1TM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A1TM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A1TM |
| Product Name | Bipolar Transistor |
| PD | 150 milliwatts |
