onsemi IGBTs - Single - G5N120BN G5N120BN

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 35006-G5N120BN
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 65ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 53nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 21A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 167W
Pulsed Collector Current: 40A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 5A
Total Switching Energy(Ets): 450μJ (on), 390μJ (off)
Turn-on and Turn-off delay time: 22ns/160ns
Testing Conditions: 960V, 5A, 25 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

IGBT 1200V 21A 167W TO247 Product overview: G5N120BN from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 21A, 167W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 21A, 167W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-G5N120BN can be used for catalog matching and distributor lookup.