onsemi IGBTs - Single - G11N120CND G11N120CND

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067595-G11N120CND
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 70ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 100nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 43A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 298W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 11A
Total Switching Energy(Ets): 950μJ (on), 1.3mJ (off)
Turn-on and Turn-off delay time: 23ns/180ns
Testing Conditions: 960V, 11A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

IGBT 1200V 43A 298W TO247 Product overview: G11N120CND from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 43A, 298W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 43A, 298W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-G11N120CND can be used for catalog matching and distributor lookup.