onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU4N50TU_WS FQU4N50TU_WS

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039999-FQU4N50TU_WS
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 460pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

MOSFET N-CH 500V 2.6A IPAK Product overview: FQU4N50TU_WS from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 2.6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQU4N50TU_WS can be used for catalog matching and distributor lookup.