onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU2N60C FQU2N60C

Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204322-FQU2N60C Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 235pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.7 Ohm @ 950mA, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited