N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204321-FQU2N100TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 1.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15.5nC @ 10V
Max Input Capacitance: 520pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 9 Ohm @ 800mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Quantity per package: 5,040
N-Channel MOSFET, 1kV, 1.6A, 9 Ohm, TO-251 Product overview: FQU2N100TU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1kV, 1.6A, 9 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1kV, 1.6A, 9 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQU2N100TU can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 1KV, 1.6A, 150DEG C, 50W ROHS COMPLIANT: YES
MOSFET N-CH 1000V 1.6A IPAK
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQU2N100TU-ND | 204321-FQU2N100TU | 278-FQU2N100TU | 54AH8776 | FQU2N100TU | FQU2N100TU |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU2N100TU | N-Channel 1kV 1.6A 9 Ohm MOSFET Transistor | Mosfet, N-Ch, 1Kv, 1.6A, 150Deg C, 50W Rohs Compliant Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; I-Pak | TO-3 | TO-251-3 Short Leads, IPak, TO-251AA | ||
| V(BR)DSS | 1000 volts |
