onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU2N100TU FQU2N100TU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204321-FQU2N100TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 1.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15.5nC @ 10V Max Input Capacitance: 520pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 9 Ohm @ 800mA, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Quantity per package: 5,040
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU2N100TU - 204321-FQU2N100TU - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQU2N100TU-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQU2N100TU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 1Kv, 1.6A, 150Deg C, 50W Rohs Compliant Onsemi - 54AH8776 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204321-FQU2N100TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 1.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15.5nC @ 10V Max Input Capacitance: 520pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 9 Ohm @ 800mA, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Quantity per package: 5,040
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU2N100TU - 204321-FQU2N100TU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU2N100TU
204321-FQU2N100TU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU2N100TU 204321-FQU2N100TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204321-FQU2N100TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 1000V (1kV) Continuous Drain Current at 25°C: 1.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15.5nC @ 10V Max Input Capacitance: 520pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 9 Ohm @ 800mA, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Quantity per package: 5,040

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204321-FQU2N100TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 1.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15.5nC @ 10V
Max Input Capacitance: 520pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 9 Ohm @ 800mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Quantity per package: 5,040

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 1kV 1.6A 9 Ohm MOSFET Transistor
278-FQU2N100TU
N-Channel 1kV 1.6A 9 Ohm MOSFET Transistor 278-FQU2N100TU
N-Channel MOSFET, 1kV, 1.6A, 9 Ohm, TO-251 Product overview: FQU2N100TU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1kV, 1.6A, 9 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1kV, 1.6A, 9 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQU2N100TU can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 1kV, 1.6A, 9 Ohm, TO-251 Product overview: FQU2N100TU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1kV, 1.6A, 9 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1kV, 1.6A, 9 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQU2N100TU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQU2N100TU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQU2N100TU-ND
Single FETs, MOSFETs FQU2N100TU-ND
N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK

N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQU2N100TU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQU2N100TU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQU2N100TU
MOSFET N-CH 1000V 1.6A IPAK

MOSFET N-CH 1000V 1.6A IPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQU2N100TU
MOSFET FQU2N100TU
MOSFET 1000V/1.6A/N-CH

MOSFET 1000V/1.6A/N-CH

Buy Now Datasheet
Mosfet, N-Ch, 1Kv, 1.6A, 150Deg C, 50W Rohs Compliant Onsemi - 54AH8776 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1Kv, 1.6A, 150Deg C, 50W Rohs Compliant Onsemi
54AH8776
Mosfet, N-Ch, 1Kv, 1.6A, 150Deg C, 50W Rohs Compliant Onsemi 54AH8776
MOSFET, N-CH, 1KV, 1.6A, 150DEG C, 50W ROHS COMPLIANT: YES

MOSFET, N-CH, 1KV, 1.6A, 150DEG C, 50W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 204321-FQU2N100TU 278-FQU2N100TU FQU2N100TU-ND FQU2N100TU FQU2N100TU 54AH8776
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU2N100TU N-Channel 1kV 1.6A 9 Ohm MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 1Kv, 1.6A, 150Deg C, 50W Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 1000 volts
PD 2500 to 50000 milliwatts 2500 milliwatts
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