onsemi Single FETs, MOSFETs FQU20N06LTU

N-Channel 60V 17.2A (Tc) 2.5W (Ta), 38W (Tc) Through Hole I-PAK

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001265-FQU20N06LTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 17.2A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 630pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 8.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 5,040

MOSFET N-CH 60V 17.2A IPAK

N-Channel MOSFET, 60V, 17.2A, 60mR, Logic Level, SOIC Product overview: FQU20N06LTU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 17.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 17.2A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQU20N06LTU can be used for catalog matching and distributor lookup.