onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06LTU FQU20N06LTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001265-FQU20N06LTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17.2A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 630pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 8.6A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 5,040
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06LTU - 001265-FQU20N06LTU - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQU20N06LTUOS-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQU20N06LTU - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQU20N06LTU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 60V, 17.2A, 150Deg C, 38W Rohs Compliant Onsemi - 54AH8778 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001265-FQU20N06LTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17.2A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 630pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 8.6A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 5,040
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06LTU - 001265-FQU20N06LTU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06LTU
001265-FQU20N06LTU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06LTU 001265-FQU20N06LTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001265-FQU20N06LTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17.2A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 630pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 8.6A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 5,040

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001265-FQU20N06LTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 17.2A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 630pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 8.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 5,040

Buy Now Datasheet
Single FETs, MOSFETs - FQU20N06LTUOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQU20N06LTUOS-ND
Single FETs, MOSFETs FQU20N06LTUOS-ND
N-Channel 60V 17.2A (Tc) 2.5W (Ta), 38W (Tc) Through Hole I-PAK

N-Channel 60V 17.2A (Tc) 2.5W (Ta), 38W (Tc) Through Hole I-PAK

Buy Now Datasheet
Single FETs, MOSFETs - FQU20N06LTU - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQU20N06LTU
Single FETs, MOSFETs FQU20N06LTU
MOSFET N-CH 60V 17.2A IPAK

MOSFET N-CH 60V 17.2A IPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQU20N06LTU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQU20N06LTU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQU20N06LTU
MOSFET N-CH 60V 17.2A IPAK

MOSFET N-CH 60V 17.2A IPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQU20N06LTU
MOSFET FQU20N06LTU
MOSFET 60V N-Channel QFET Logic Level

MOSFET 60V N-Channel QFET Logic Level

Buy Now Datasheet
Mosfet, N-Ch, 60V, 17.2A, 150Deg C, 38W Rohs Compliant Onsemi - 54AH8778 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 17.2A, 150Deg C, 38W Rohs Compliant Onsemi
54AH8778
Mosfet, N-Ch, 60V, 17.2A, 150Deg C, 38W Rohs Compliant Onsemi 54AH8778
MOSFET, N-CH, 60V, 17.2A, 150DEG C, 38W ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 17.2A, 150DEG C, 38W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001265-FQU20N06LTU FQU20N06LTUOS-ND FQU20N06LTU FQU20N06LTU FQU20N06LTU 54AH8778
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06LTU Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 17.2A, 150Deg C, 38W Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 60 volts 60 volts
PD 2500 to 38000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data