onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06LTU FQU20N06LTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001265-FQU20N06LTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17.2A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 630pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 8.6A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 5,040
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06LTU - 001265-FQU20N06LTU - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQU20N06LTU - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQU20N06LTUOS-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 60V, 17.2A, 150Deg C, 38W Rohs Compliant Onsemi - 54AH8778 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQU20N06LTU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001265-FQU20N06LTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17.2A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 630pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 8.6A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 5,040
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06LTU - 001265-FQU20N06LTU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06LTU
001265-FQU20N06LTU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06LTU 001265-FQU20N06LTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001265-FQU20N06LTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17.2A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 13nC @ 5V Max Input Capacitance: 630pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 8.6A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 5,040

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001265-FQU20N06LTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 17.2A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 630pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 8.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 5,040

Buy Now Datasheet
Single FETs, MOSFETs - FQU20N06LTU - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQU20N06LTU
Single FETs, MOSFETs FQU20N06LTU
MOSFET N-CH 60V 17.2A IPAK

MOSFET N-CH 60V 17.2A IPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FQU20N06LTUOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQU20N06LTUOS-ND
Single FETs, MOSFETs FQU20N06LTUOS-ND
N-Channel 60V 17.2A (Tc) 2.5W (Ta), 38W (Tc) Through Hole I-PAK

N-Channel 60V 17.2A (Tc) 2.5W (Ta), 38W (Tc) Through Hole I-PAK

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQU20N06LTU
MOSFET FQU20N06LTU
MOSFET 60V N-Channel QFET Logic Level

MOSFET 60V N-Channel QFET Logic Level

Buy Now Datasheet
Mosfet, N-Ch, 60V, 17.2A, 150Deg C, 38W Rohs Compliant Onsemi - 54AH8778 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 17.2A, 150Deg C, 38W Rohs Compliant Onsemi
54AH8778
Mosfet, N-Ch, 60V, 17.2A, 150Deg C, 38W Rohs Compliant Onsemi 54AH8778
MOSFET, N-CH, 60V, 17.2A, 150DEG C, 38W ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 17.2A, 150DEG C, 38W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQU20N06LTU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQU20N06LTU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQU20N06LTU
MOSFET N-CH 60V 17.2A IPAK

MOSFET N-CH 60V 17.2A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 001265-FQU20N06LTU FQU20N06LTU FQU20N06LTUOS-ND FQU20N06LTU 54AH8778 FQU20N06LTU
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU20N06LTU Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 17.2A, 150Deg C, 38W Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 2500 to 38000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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