onsemi P-Channel -60V -9.4A MOSFET Transistor FQU11P06TU

P-Channel MOSFET -60V -9.4A 185mR TO-251 Product overview: FQU11P06TU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -9.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -9.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQU11P06TU can be used for catalog matching and distributor lookup.

P-Channel 60V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Through Hole I-PAK

MOSFET P-CH 60V 9.4A IPAK

POWER FIELD-EFFECT TRANSISTOR, 9

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039979-FQU11P06TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 185 mOhm @ 4.7A, 10V
Alternative Parts (Cross-Reference): IRFU9024NPBF; FQU11P06; FQU11P06TU_NL;
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Quantity per package: 5,040