MOSFETs -200V Single Product overview: FQT3P20TF from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQT3P20TF can be used for catalog matching and distributor lookup.
P-Channel 200V 670mA (Tc) 2.5W (Tc) Surface Mount SOT-223-4
P-Channel 200V 670mA (Tc) 2.5W (Tc) Surface Mount SOT-223-4
P-Channel 200V 670mA (Tc) 2.5W (Tc) Surface Mount SOT-223-4
MOSFET P-CH 200V 670MA SOT223-4
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067476-FQT3P20TF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 670mA (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 8nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.7 Ohm @ 335mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs
MOSFET, P-CH, -400V, -0.67A, SOT-223-4; Channel Type:P Channel; Drain Source Voltage Vds:-200V; Continuous Drain Current Id:-670mA; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-5V; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET P-CH 200V 670MA SOT223-4
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2088-FQT3P20TF | FQT3P20TFCT-ND | FQT3P20TF | 067476-FQT3P20TF | FQT3P20TF | 46AC0866 | FQT3P20TF |
| Product Name | -200V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQT3P20TF | MOSFET | Mosfet, P-Ch, -400V, -0.67A, Sot-223-4; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 7.00E-4 kS | ||||||
| PD | 2.5 milliwatts | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | |||
| Package Type | Reel | SOT223; TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | SOT3; SOT-223-4 | TO-3; SOT223 | TO-261-4, TO-261AA |
