N-Channel 250V 8.8A (Tc) 38W (Tc) Through Hole TO-220F-3 (Y-Forming)
N-Channel MOSFET, 250V, 8.8A, 430mR, TO-220F Product overview: FQPF9N25CYDTU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 250V, 8.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 8.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF9N25CYDTU can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067474-FQPF9N25CYDTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F-3 (Y-Forming)
Dimension: TO-220-3 Full Pack, Formed Leads
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 8.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 710pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 430 mOhm @ 4.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 800
MOSFET S - SINGLE; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:8.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:38W RoHS Compliant: Yes
MOSFET N-CH 250V 8.8A TO220F-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQPF9N25CYDTU-ND | 278-FQPF9N25CYDTU | 067474-FQPF9N25CYDTU | 08N9513 | FQPF9N25CYDTU |
| Product Name | Single FETs, MOSFETs | N-Channel 250V 8.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF9N25CYDTU | Mosfet S Single; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-220; TO-220-3 Full Pack, Formed Leads | TO-220; SOT3; TO-220F-3 (Y-Forming) | TO-3 | TO-220; TO-220-3 Full Pack, Formed Leads | |
| PD | 38000 milliwatts | 38000 milliwatts | 38000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
