onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF4N80 FQPF4N80

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067462-FQPF4N80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.2A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 880pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

N-Channel 800V 2.2A (Tc) 43W (Tc) Through Hole TO-220F-3

MOSFET N-CH 800V 2.2A TO220F Product overview: FQPF4N80 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF4N80 can be used for catalog matching and distributor lookup.