onsemi Single FETs, MOSFETs FQPF12N60

Description
N-Channel 600V 5.8A (Tc) 55W (Tc) Through Hole TO-220F-3
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Description
N-Channel 600V 5.8A (Tc) 55W (Tc) Through Hole TO-220F-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - FQPF12N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQPF12N60-ND
Single FETs, MOSFETs FQPF12N60-ND
N-Channel 600V 5.8A (Tc) 55W (Tc) Through Hole TO-220F-3

N-Channel 600V 5.8A (Tc) 55W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
FETs - Single - FQPF12N60 - 1175465-FQPF12N60 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQPF12N60
1175465-FQPF12N60
FETs - Single - FQPF12N60 1175465-FQPF12N60
Manufacturer: ON Semiconductor Win Source Part Number: 1175465-FQPF12N60 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 55W Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 5.8A Rds On (Maximum) at Id, Vgs: 700mOhm at 2.9A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 54nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1900pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175465-FQPF12N60
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 55W
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 5.8A
Rds On (Maximum) at Id, Vgs: 700mOhm at 2.9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 54nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1900pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQPF12N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQPF12N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQPF12N60
MOSFET N-CH 600V 5.8A TO220F

MOSFET N-CH 600V 5.8A TO220F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQPF12N60-ND 1175465-FQPF12N60 FQPF12N60
Product Name Single FETs, MOSFETs FETs - Single - FQPF12N60 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3 TO-220; TO-220-3 Full Pack
V(BR)DSS 600 volts
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