onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQPF10N60CT FQPF10N60CT

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067449-FQPF10N60CT
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 57nC @ 10V
Max Input Capacitance: 2040pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 730 mOhm @ 4.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

N-Channel QFET® MOSFET 600V, 9.5A, 730 mΩ, TO-220F 3L, 1000-RAIL Product overview: FQPF10N60CT from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 9.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQPF10N60CT can be used for catalog matching and distributor lookup.

N-Channel 600V 9.5A (Tc) 50W (Tc) Through Hole TO-220F-3