Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067444-FQP70N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 57A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 3300pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 23 mOhm @ 28.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
N-Channel 100V 57A (Tc) 160W (Tc) Through Hole TO-220-3
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 57A I(D), 100V, 0.023OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 57A TO220-3
| Win Source Electronics | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 067444-FQP70N10 | FQP70N10-ND | 16125744 | FQP70N10 | FQP70N10 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP70N10 | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | ||||
| PD | 160000 milliwatts |
