N-Channel 800V 3A (Tc) 107W (Tc) Through Hole TO-220-3
800V N-Channel Power MOSFET, 3A, 4.8 Ohm, TO-220 Product overview: FQP3N80C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 3A, 4.8 Ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 3A, 4.8 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP3N80C can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016455-FQP3N80C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 107W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 16.5nC @ 10V
Max Input Capacitance: 705pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.8 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:107W; MSL:-RoHS Compliant: Yes
MOSFET 800V N-Ch Q-FET advance C-Series
MOSFET N-CH 800V 3A TO220-3
POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 800V, 4.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | FQP3N80CFS-ND | 278-FQP3N80C | 016455-FQP3N80C | 97K0176 | FQP3N80C | FQP3N80C | 38469741 |
| Product Name | Single FETs, MOSFETs | N-Channel 800V 3A 4.8 Ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP3N80C | Mosfet, N, To-220; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-3; TO-220 | TO-220; TO-220-3 | |||
| PD | 107000 milliwatts | 107000 milliwatts | 107000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
