onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22N30 FQP22N30

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039835-FQP22N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22N30 - 1039835-FQP22N30 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQP22N30-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQP22N30 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQP22N30 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP22N30 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 300V, 21A, To-220; Channel Type Onsemi - 34C0488 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039835-FQP22N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22N30 - 1039835-FQP22N30 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22N30
1039835-FQP22N30
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22N30 1039835-FQP22N30
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039835-FQP22N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039835-FQP22N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP22N30-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP22N30-ND
Single FETs, MOSFETs FQP22N30-ND
N-Channel 300V 21A (Tc) 170W (Tc) Through Hole TO-220-3

N-Channel 300V 21A (Tc) 170W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - FQP22N30 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP22N30
Single FETs, MOSFETs FQP22N30
MOSFET N-CH 300V 21A TO220-3

MOSFET N-CH 300V 21A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP22N30 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP22N30
Single FETs, MOSFETs FQP22N30
POWER FIELD-EFFECT TRANSISTOR, 2

POWER FIELD-EFFECT TRANSISTOR, 2

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP22N30 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP22N30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP22N30
MOSFET N-CH 300V 21A TO220-3

MOSFET N-CH 300V 21A TO220-3

Supplier's Site
N Channel Mosfet, 300V, 21A, To-220; Channel Type Onsemi - 34C0488 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 300V, 21A, To-220; Channel Type Onsemi
34C0488
N Channel Mosfet, 300V, 21A, To-220; Channel Type Onsemi 34C0488
N CHANNEL MOSFET, 300V, 21A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 300V, 21A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQP22N30
MOSFET FQP22N30
MOSFET 300V N-Channel QFET

MOSFET 300V N-Channel QFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039835-FQP22N30 FQP22N30-ND FQP22N30 FQP22N30 34C0488 FQP22N30
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22N30 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 300V, 21A, To-220; Channel Type Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 300 volts 300 volts
PD 170000 milliwatts 170000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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