onsemi Single FETs, MOSFETs FQP22N30

Description
MOSFET N-CH 300V 21A TO220-3
  • Single FETs, MOSFETs - FQP22N30 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQP22N30 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22N30 - 1039835-FQP22N30 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQP22N30-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 300V, 21A, To-220; Channel Type Onsemi - 34C0488 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP22N30 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 300V 21A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQP22N30 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP22N30
Single FETs, MOSFETs FQP22N30
MOSFET N-CH 300V 21A TO220-3

MOSFET N-CH 300V 21A TO220-3

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP22N30 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQP22N30
Single FETs, MOSFETs FQP22N30
POWER FIELD-EFFECT TRANSISTOR, 2

POWER FIELD-EFFECT TRANSISTOR, 2

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22N30 - 1039835-FQP22N30 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22N30
1039835-FQP22N30
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22N30 1039835-FQP22N30
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039835-FQP22N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039835-FQP22N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 160 mOhm @ 10.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQP22N30-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP22N30-ND
Single FETs, MOSFETs FQP22N30-ND
N-Channel 300V 21A (Tc) 170W (Tc) Through Hole TO-220-3

N-Channel 300V 21A (Tc) 170W (Tc) Through Hole TO-220-3

Buy Now Datasheet
N Channel Mosfet, 300V, 21A, To-220; Channel Type Onsemi - 34C0488 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 300V, 21A, To-220; Channel Type Onsemi
34C0488
N Channel Mosfet, 300V, 21A, To-220; Channel Type Onsemi 34C0488
N CHANNEL MOSFET, 300V, 21A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 300V, 21A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQP22N30
MOSFET FQP22N30
MOSFET 300V N-Channel QFET

MOSFET 300V N-Channel QFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP22N30 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP22N30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP22N30
MOSFET N-CH 300V 21A TO220-3

MOSFET N-CH 300V 21A TO220-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQP22N30 1039835-FQP22N30 FQP22N30-ND 34C0488 FQP22N30 FQP22N30
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP22N30 Single FETs, MOSFETs N Channel Mosfet, 300V, 21A, To-220; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 300 volts 300 volts
IDSS 21000 milliamps 21000 milliamps
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