onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP19N10L FQP19N10L

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039830-FQP19N10L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 18nC @ 5V Max Input Capacitance: 870pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP19N10L - 1039830-FQP19N10L - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQP19N10L-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP19N10L - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 100V 19A TO-220 - 598-FQP19N10L - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039830-FQP19N10L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 18nC @ 5V Max Input Capacitance: 870pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP19N10L - 1039830-FQP19N10L - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP19N10L
1039830-FQP19N10L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP19N10L 1039830-FQP19N10L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039830-FQP19N10L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 18nC @ 5V Max Input Capacitance: 870pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 9.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039830-FQP19N10L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 18nC @ 5V
Max Input Capacitance: 870pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 9.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
100V 19A TO220 MOSFET Transistor
278-FQP19N10L
100V 19A TO220 MOSFET Transistor 278-FQP19N10L
MOSFET N-CH 100V 19A TO220-3 Product overview: FQP19N10L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 19A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 19A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP19N10L can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 19A TO220-3 Product overview: FQP19N10L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 19A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 19A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQP19N10L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQP19N10L-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQP19N10L-ND
Single FETs, MOSFETs FQP19N10L-ND
N-Channel 100V 19A (Tc) 75W (Tc) Through Hole TO-220-3

N-Channel 100V 19A (Tc) 75W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQP19N10L - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQP19N10L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQP19N10L
MOSFET N-CH 100V 19A TO220-3

MOSFET N-CH 100V 19A TO220-3

Supplier's Site
MOSFET N-CH 100V 19A TO-220 - 598-FQP19N10L - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 19A TO-220
598-FQP19N10L
MOSFET N-CH 100V 19A TO-220 598-FQP19N10L
MOSFET N-CH 100V 19A TO-220

MOSFET N-CH 100V 19A TO-220

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039830-FQP19N10L 278-FQP19N10L FQP19N10L-ND FQP19N10L 598-FQP19N10L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQP19N10L 100V 19A TO220 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 100V 19A TO-220
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 75000 milliwatts 75000 milliwatts 75000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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