onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI50N06TU FQI50N06TU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774745-FQI50N06TU Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Family Name: FQI50N06 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1540pF @ 25V Vgs (Maximum): ±25V Power Dissipation (Maximum): 3.75W (Ta), 120W (Tc) Rds On (Maximum) @ Id, Vgs: 22 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): SiHFZ44L; SiHFZ44L-E3; STB55NF06-1; STB55NF06L-1; Introduction Date: May 01, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI50N06TU - 774745-FQI50N06TU - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQI50N06TU-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI50N06TU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 60V, 50A, I2Pak; Channel Type Onsemi - 82C4173 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774745-FQI50N06TU Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Family Name: FQI50N06 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1540pF @ 25V Vgs (Maximum): ±25V Power Dissipation (Maximum): 3.75W (Ta), 120W (Tc) Rds On (Maximum) @ Id, Vgs: 22 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): SiHFZ44L; SiHFZ44L-E3; STB55NF06-1; STB55NF06L-1; Introduction Date: May 01, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI50N06TU - 774745-FQI50N06TU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI50N06TU
774745-FQI50N06TU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI50N06TU 774745-FQI50N06TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774745-FQI50N06TU Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Family Name: FQI50N06 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1540pF @ 25V Vgs (Maximum): ±25V Power Dissipation (Maximum): 3.75W (Ta), 120W (Tc) Rds On (Maximum) @ Id, Vgs: 22 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): SiHFZ44L; SiHFZ44L-E3; STB55NF06-1; STB55NF06L-1; Introduction Date: May 01, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774745-FQI50N06TU
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Family Name: FQI50N06
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 41nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1540pF @ 25V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 3.75W (Ta), 120W (Tc)
Rds On (Maximum) @ Id, Vgs: 22 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): SiHFZ44L; SiHFZ44L-E3; STB55NF06-1; STB55NF06L-1;
Introduction Date: May 01, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FQI50N06TU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQI50N06TU-ND
Single FETs, MOSFETs FQI50N06TU-ND
N-Channel 60V 50A (Tc) 3.75W (Ta), 120W (Tc) Through Hole I2PAK (TO-262)

N-Channel 60V 50A (Tc) 3.75W (Ta), 120W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQI50N06TU
MOSFET FQI50N06TU
MOSFET 60V N-Channel QFET

MOSFET 60V N-Channel QFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI50N06TU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQI50N06TU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQI50N06TU
MOSFET N-CH 60V 50A I2PAK

MOSFET N-CH 60V 50A I2PAK

Supplier's Site
Mosfet, N-Ch, 60V, 50A, I2Pak; Channel Type Onsemi - 82C4173 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 50A, I2Pak; Channel Type Onsemi
82C4173
Mosfet, N-Ch, 60V, 50A, I2Pak; Channel Type Onsemi 82C4173
MOSFET, N-CH, 60V, 50A, I2PAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3PinsRoHS Compliant: Yes

MOSFET, N-CH, 60V, 50A, I2PAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3PinsRoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 774745-FQI50N06TU FQI50N06TU-ND FQI50N06TU FQI50N06TU 82C4173
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI50N06TU Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 50A, I2Pak; Channel Type Onsemi
PD 3750 to 120000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type SOT3 TO-262-3 Long Leads, I2PAK, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA TO-3
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