Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774743-FQI4N20LTU
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQI4N20L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 200V
Vgs(th) (Maximum) @ Id: 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 5.2nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 310pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.13W (Ta), 45W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.35 Ohm @ 1.9A, 10V
Introduction Date: December 22, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
N-Channel 200V 3.8A (Tc) 3.13W (Ta), 45W (Tc) Through Hole I2PAK (TO-262)
MOSFET N-CH 200V 3.8A I2PAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 774743-FQI4N20LTU | FQI4N20LTU-ND | FQI4N20LTU |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI4N20LTU | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 3130 to 45000 milliwatts |
