onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI4N20LTU FQI4N20LTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774743-FQI4N20LTU Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Part Status: Obsolete(EOL) Family Name: FQI4N20L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 310pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 3.13W (Ta), 45W (Tc) Rds On (Maximum) @ Id, Vgs: 1.35 Ohm @ 1.9A, 10V Introduction Date: December 22, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI4N20LTU - 774743-FQI4N20LTU - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQI4N20LTU-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI4N20LTU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774743-FQI4N20LTU Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Part Status: Obsolete(EOL) Family Name: FQI4N20L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 310pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 3.13W (Ta), 45W (Tc) Rds On (Maximum) @ Id, Vgs: 1.35 Ohm @ 1.9A, 10V Introduction Date: December 22, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI4N20LTU - 774743-FQI4N20LTU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI4N20LTU
774743-FQI4N20LTU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI4N20LTU 774743-FQI4N20LTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774743-FQI4N20LTU Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Part Status: Obsolete(EOL) Family Name: FQI4N20L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 310pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 3.13W (Ta), 45W (Tc) Rds On (Maximum) @ Id, Vgs: 1.35 Ohm @ 1.9A, 10V Introduction Date: December 22, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774743-FQI4N20LTU
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQI4N20L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 200V
Vgs(th) (Maximum) @ Id: 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 5.2nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 310pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.13W (Ta), 45W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.35 Ohm @ 1.9A, 10V
Introduction Date: December 22, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

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Single FETs, MOSFETs - FQI4N20LTU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQI4N20LTU-ND
Single FETs, MOSFETs FQI4N20LTU-ND
N-Channel 200V 3.8A (Tc) 3.13W (Ta), 45W (Tc) Through Hole I2PAK (TO-262)

N-Channel 200V 3.8A (Tc) 3.13W (Ta), 45W (Tc) Through Hole I2PAK (TO-262)

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI4N20LTU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQI4N20LTU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQI4N20LTU
MOSFET N-CH 200V 3.8A I2PAK

MOSFET N-CH 200V 3.8A I2PAK

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 774743-FQI4N20LTU FQI4N20LTU-ND FQI4N20LTU
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI4N20LTU Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 3130 to 45000 milliwatts
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