onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI2P25TU FQI2P25TU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039796-FQI2P25TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 2.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8.5nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4 Ohm @ 1.15A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI2P25TU - 1039796-FQI2P25TU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI2P25TU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039796-FQI2P25TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 2.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8.5nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4 Ohm @ 1.15A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI2P25TU - 1039796-FQI2P25TU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI2P25TU
1039796-FQI2P25TU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI2P25TU 1039796-FQI2P25TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039796-FQI2P25TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 2.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8.5nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4 Ohm @ 1.15A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039796-FQI2P25TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.13W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 2.3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 8.5nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4 Ohm @ 1.15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI2P25TU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQI2P25TU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQI2P25TU
MOSFET P-CH 250V 2.3A I2PAK

MOSFET P-CH 250V 2.3A I2PAK

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039796-FQI2P25TU FQI2P25TU
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI2P25TU Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 250 volts
PD 3130 to 52000 milliwatts
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