onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI27P06 FQI27P06

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040341-FQI27P06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 27A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 70 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

MOSFET P-CH 60V 27A I2PAK Product overview: FQI27P06 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 27A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 27A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQI27P06 can be used for catalog matching and distributor lookup.