onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI27P06 FQI27P06

Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040341-FQI27P06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 70 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited