onsemi Single FETs, MOSFETs FQI27N25TU

N-Channel 250V 25.5A (Tc) 3.13W (Ta), 180W (Tc) Through Hole I2PAK (TO-262)

MOSFET N-CH 250V 25.5A I2PAK

250V 25.5A N-Channel MOSFET, 110mR, I2PAK Product overview: FQI27N25TU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 250V, 25.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 25.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQI27N25TU can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1175381-FQI27N25TU
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 25.5A (Tc)
Family Name: FQI27N25
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 250V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2450pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 3.13W (Ta), 180W (Tc)
Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 12.75A, 10V
Alternative Parts (Cross-Reference): FQI27N25;
Introduction Date: May 01, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited