onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI27N25TU_F085 FQI27N25TU_F085

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 137993-FQI27N25TU_F085
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 417W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK (TO-262)
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 25.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 110 mOhm @ 12.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

MOSFET N-CH 250V 25.5A I2PAK Product overview: FQI27N25TU_F085 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 25.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 25.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQI27N25TU_F085 can be used for catalog matching and distributor lookup.