onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FQI17P10TU

Win Source Part Number: 992355-FQI17P10TU Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: QFET™ Package: Bulk Standard Package: 1 Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 100W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.29.0095 Mfr: Fairchild Semiconductor Other Names: 2156-FQI17P10TU,FAIF SCFQI17P10TU Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: RoHS non-compliant