onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FQI16N25CTU

Description
Win Source Part Number: 1164539-FQI16N25CTU Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: QFET® Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.13W (Ta), 139W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. HTSUS: 8541.29.0095 Mfr: Fairchild Semiconductor Other Names: 2156-FQI16N25CTU-FS, FAIFSCFQI16N25CTU Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1164539-FQI16N25CTU Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: QFET® Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.13W (Ta), 139W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. HTSUS: 8541.29.0095 Mfr: Fairchild Semiconductor Other Names: 2156-FQI16N25CTU-FS, FAIFSCFQI16N25CTU Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

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Product
Description
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1164539-FQI16N25CTU - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1164539-FQI16N25CTU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1164539-FQI16N25CTU
Win Source Part Number: 1164539-FQI16N25CTU Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: QFET® Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.13W (Ta), 139W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 71 pct. HTSUS: 8541.29.0095 Mfr: Fairchild Semiconductor Other Names: 2156-FQI16N25CTU-FS, FAIFSCFQI16N25CTU Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1164539-FQI16N25CTU
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: QFET®
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 139W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
HTSUS: 8541.29.0095
Mfr: Fairchild Semiconductor
Other Names: 2156-FQI16N25CTU-FS,FAIFSCFQI16N25CTU
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI16N25CTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQI16N25CTU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQI16N25CTU
MOSFET N-CH 250V 15.6A I2PAK

MOSFET N-CH 250V 15.6A I2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1164539-FQI16N25CTU FQI16N25CTU
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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