onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI10N20CTU FQI10N20CTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774736-FQI10N20CTU Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Part Status: Obsolete(EOL) Family Name: FQI10N20C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 510pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 72W (Tc) Rds On (Maximum) @ Id, Vgs: 360 mOhm @ 4.75A, 10V Alternative Parts (Cross-Reference): IRF630NL; 2SK3109-S; 2SK3109-S-AZ; 2SK3109-S-A; Introduction Date: September 29, 2003 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774736-FQI10N20CTU Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Part Status: Obsolete(EOL) Family Name: FQI10N20C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 510pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 72W (Tc) Rds On (Maximum) @ Id, Vgs: 360 mOhm @ 4.75A, 10V Alternative Parts (Cross-Reference): IRF630NL; 2SK3109-S; 2SK3109-S-AZ; 2SK3109-S-A; Introduction Date: September 29, 2003 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI10N20CTU - 774736-FQI10N20CTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI10N20CTU
774736-FQI10N20CTU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI10N20CTU 774736-FQI10N20CTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774736-FQI10N20CTU Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Part Status: Obsolete(EOL) Family Name: FQI10N20C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 510pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 72W (Tc) Rds On (Maximum) @ Id, Vgs: 360 mOhm @ 4.75A, 10V Alternative Parts (Cross-Reference): IRF630NL; 2SK3109-S; 2SK3109-S-AZ; 2SK3109-S-A; Introduction Date: September 29, 2003 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774736-FQI10N20CTU
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQI10N20C
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 200V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 510pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 72W (Tc)
Rds On (Maximum) @ Id, Vgs: 360 mOhm @ 4.75A, 10V
Alternative Parts (Cross-Reference): IRF630NL; 2SK3109-S; 2SK3109-S-AZ; 2SK3109-S-A;
Introduction Date: September 29, 2003
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
200V 9.5A MOSFET Transistor
278-FQI10N20CTU
200V 9.5A MOSFET Transistor 278-FQI10N20CTU
MOSFET N-CH 200V 9.5A I2PAK Product overview: FQI10N20CTU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQI10N20CTU can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 9.5A I2PAK Product overview: FQI10N20CTU from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQI10N20CTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQI10N20CTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQI10N20CTU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQI10N20CTU
MOSFET N-CH 200V 9.5A I2PAK

MOSFET N-CH 200V 9.5A I2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 774736-FQI10N20CTU 278-FQI10N20CTU FQI10N20CTU
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQI10N20CTU 200V 9.5A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 72000 milliwatts 72000 milliwatts
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