onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N50TM FQD4N50TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016437-FQD4N50TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 460pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016437-FQD4N50TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 460pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N50TM - 016437-FQD4N50TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N50TM
016437-FQD4N50TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N50TM 016437-FQD4N50TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016437-FQD4N50TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 2.6A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 460pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016437-FQD4N50TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 2.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 460pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FQD4N50TM-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD4N50TM-ND
Single FETs, MOSFETs FQD4N50TM-ND
N-Channel 500V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA

N-Channel 500V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore
500V 2.6A 2.7 Ohm TO-252 MOSFET Transistor
278-FQD4N50TM
500V 2.6A 2.7 Ohm TO-252 MOSFET Transistor 278-FQD4N50TM
500V N-CH MOSFET, 2.6A, 2.7 Ohm RdsOn, TO-252 Product overview: FQD4N50TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 2.6A, 2.7 Ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 2.6A, 2.7 Ohm, TO-252, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD4N50TM can be used for catalog matching and distributor lookup.

500V N-CH MOSFET, 2.6A, 2.7 Ohm RdsOn, TO-252 Product overview: FQD4N50TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 2.6A, 2.7 Ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 2.6A, 2.7 Ohm, TO-252, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD4N50TM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET N-CH 500V 2.6A DPAK - 598-FQD4N50TM - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 2.6A DPAK
598-FQD4N50TM
MOSFET N-CH 500V 2.6A DPAK 598-FQD4N50TM
MOSFET N-CH 500V 2.6A DPAK

MOSFET N-CH 500V 2.6A DPAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD4N50TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD4N50TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD4N50TM
MOSFET N-CH 500V 2.6A DPAK

MOSFET N-CH 500V 2.6A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 016437-FQD4N50TM FQD4N50TM-ND 278-FQD4N50TM 598-FQD4N50TM FQD4N50TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD4N50TM Single FETs, MOSFETs 500V 2.6A 2.7 Ohm TO-252 MOSFET Transistor MOSFET N-CH 500V 2.6A DPAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 2500 to 45000 milliwatts 45000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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