onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD3P20TM FQD3P20TM

The FQD3P20 is a P-channel MOSFET designed for high-efficiency switching DC/DC converters, with a drain-source voltage rating of -200 V and a continuous drain current of -2.4 A at 25°C case temperature. It is available in D-PAK and I-PAK surface mount packages, with dimensions specified as 6.60 mm x 5.34 mm for D-PAK and 6.60 mm x 5.34 mm for I-PAK. The device features an on-state resistance of 2.7 Ω max at -10 V gate-source voltage, a typical gate charge of 6.0 nC, and a reverse transfer capacitance of 7.5 pF. It is 100% avalanche tested, with a single pulse avalanche energy rating of 150 mJ, and operates over a junction and storage temperature range of -55°C to +150°C. The part meets RoHS standards and is qualified for high-reliability applications.