onsemi 600V 1.9A DPAK MOSFET Transistor FQD2N60CTF

Description
600V N-CH MOSFET, 1.9A, 4.7R Rds(on), DPAK Product overview: FQD2N60CTF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1.9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1.9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD2N60CTF can be used for catalog matching and distributor lookup.
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N60CTF - 116628-FQD2N60CTF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD2N60CTF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 21491216 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
600V N-CH MOSFET, 1.9A, 4.7R Rds(on), DPAK Product overview: FQD2N60CTF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1.9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1.9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD2N60CTF can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
600V 1.9A DPAK MOSFET Transistor
278-FQD2N60CTF
600V 1.9A DPAK MOSFET Transistor 278-FQD2N60CTF
600V N-CH MOSFET, 1.9A, 4.7R Rds(on), DPAK Product overview: FQD2N60CTF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1.9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1.9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD2N60CTF can be used for catalog matching and distributor lookup.

600V N-CH MOSFET, 1.9A, 4.7R Rds(on), DPAK Product overview: FQD2N60CTF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1.9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1.9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD2N60CTF can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N60CTF - 116628-FQD2N60CTF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N60CTF
116628-FQD2N60CTF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N60CTF 116628-FQD2N60CTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 116628-FQD2N60CTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 235pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.7 Ohm @ 950mA, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 116628-FQD2N60CTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 235pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.7 Ohm @ 950mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD2N60CTF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD2N60CTF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD2N60CTF
MOSFET N-CH 600V 1.9A DPAK

MOSFET N-CH 600V 1.9A DPAK

Supplier's Site
Transistor - 21491216 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
21491216
Transistor 21491216
N CHANNEL MOSFET, 600V, 1.9MA; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT, ID:1.9MA; DRAIN SOURCE VOLTAGE, VDS:600V; ON RESISTANCE, RDS(O. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 600V, 1.9MA; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT, ID:1.9MA; DRAIN SOURCE VOLTAGE, VDS:600V; ON RESISTANCE, RDS(O. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 278-FQD2N60CTF 116628-FQD2N60CTF FQD2N60CTF 21491216
Product Name 600V 1.9A DPAK MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N60CTF Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel N-Channel; N-Channel
PD 44000 milliwatts 2500 to 44000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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