onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N30TM FQD2N30TM

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039719-FQD2N30TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 5nC @ 10V
Max Input Capacitance: 130pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.7 Ohm @ 850mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

MOSFET N-CH 300V 1.7A DPAK Product overview: FQD2N30TM from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V, 1.7A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 300V, 1.7A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQD2N30TM can be used for catalog matching and distributor lookup.