onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N30TM FQD2N30TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039719-FQD2N30TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 5nC @ 10V Max Input Capacitance: 130pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.7 Ohm @ 850mA, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039719-FQD2N30TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 5nC @ 10V Max Input Capacitance: 130pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.7 Ohm @ 850mA, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N30TM - 1039719-FQD2N30TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N30TM
1039719-FQD2N30TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N30TM 1039719-FQD2N30TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039719-FQD2N30TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 5nC @ 10V Max Input Capacitance: 130pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.7 Ohm @ 850mA, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039719-FQD2N30TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 5nC @ 10V
Max Input Capacitance: 130pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.7 Ohm @ 850mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039719-FQD2N30TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N30TM
Polarity N-Channel; N-Channel
V(BR)DSS 300 volts
PD 2500 to 25000 milliwatts
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