onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD2N100TM FQD2N100TM

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016431-FQD2N100TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Family Name: FQD2N100
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 1.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15.5nC @ 10V
Max Input Capacitance: 520pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 9 Ohm @ 800mA, 10V
Alternative Parts (Cross-Reference): STD2NK90Z; STD3NK90ZT4; STD2NK90ZT4; STD3NK90Z;
Introduction Date: February 01, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Lighting
Quantity per package: 2,500

N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

N-Channel 1000V 1.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA

POWER FIELD-EFFECT TRANSISTOR, 1

MOSFET N-CH 1000V 1.6A DPAK