The Power MOSFET is an N-Channel device with a maximum drain-source voltage of 800 V and a continuous drain current rating of 1 A at a case temperature of 25¬8C. It features a low on-resistance of 15.5 Ohms at a gate-source voltage of 10 V and a drain current of 0.5 A. The device is designed for applications such as switched mode power supplies and active power factor correction. It has a low gate charge of approximately 5.5 nC, which contributes to efficient switching performance. The MOSFET is RoHS compliant, making it suitable for environmentally conscious designs. The operating temperature range is from -55¬8C to +150¬8C, ensuring reliability in various conditions.
MOSFETs Power MOSFET Product overview: FQD1N80TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD1N80TM can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067399-FQD1N80TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 1A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 7.2nC @ 10V
Max Input Capacitance: 195pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 20 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Lighting
Quantity per package: 2,500
MOSFET N-CH 800V 1A DPAK
N-Channel 800V 1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA
N-Channel 800V 1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA
N-Channel 800V 1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA
Power MOSFET, N Channel, 1 A, 800 V, 15.5 ohm, 10 V, 5 V RoHS Compliant: Yes
N CHANNEL MOSFET, 800V, 1mA; Transistor Polarity:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:1A; On Resistance Rds(on):15.5ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
N CHANNEL MOSFET, 800V, 1mA, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
MOSFET N-CH 800V 1A DPAK
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 1A, 800V, 20OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FQD1N80TM | 067399-FQD1N80TM | FQD1N80TM | FQD1N80TMCT-ND | 31Y1519 | 15R3443 | 82C4006 | FQD1N80TM | 21491224 | FQD1N80TM |
| Product Name | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N80TM | Single FETs, MOSFETs | Single FETs, MOSFETs | Power Mosfet, N Channel, 1 A, 800 V, 15.5 Ohm, 10 V, 5 V Rohs Compliant Onsemi | N Channel Mosfet, 800V, 1Ma; Transistor Polarity Onsemi | N Channel Mosfet, 800V, 1Ma, Full Reel; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||||
| Transconductance | 7.50E-4 kS | |||||||||
| PD | 2.5 milliwatts | 2500 to 45000 milliwatts | 2500 milliwatts | |||||||
| Package Type | Reel | SOT3; TO-252 (DPAK); D-Pak | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-3 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
