onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTM FQD1N60CTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067397-FQD1N60CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 6.2nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 11.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTM - 067397-FQD1N60CTM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQD1N60CTM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQD1N60CTMTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD1N60CTM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Power Mosfet, N Channel, 1 A, 600 V, 9.3 Ohm, 10 V, 2 V Rohs Compliant Onsemi - 95W3214 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R - 598-FQD1N60CTM - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067397-FQD1N60CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 6.2nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 11.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTM - 067397-FQD1N60CTM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTM
067397-FQD1N60CTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTM 067397-FQD1N60CTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067397-FQD1N60CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 6.2nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 11.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067397-FQD1N60CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 6.2nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 11.5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FQD1N60CTM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD1N60CTM
Single FETs, MOSFETs FQD1N60CTM
MOSFET N-CH 600V 1A DPAK

MOSFET N-CH 600V 1A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FQD1N60CTMTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD1N60CTMTR-ND
Single FETs, MOSFETs FQD1N60CTMTR-ND
N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA

N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD1N60CTM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD1N60CTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD1N60CTM
MOSFET N-CH 600V 1A DPAK

MOSFET N-CH 600V 1A DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQD1N60CTM
MOSFET FQD1N60CTM
MOSFET N-CH/600V/1A/ QFET C-Series

MOSFET N-CH/600V/1A/ QFET C-Series

Buy Now Datasheet
Power Mosfet, N Channel, 1 A, 600 V, 9.3 Ohm, 10 V, 2 V Rohs Compliant Onsemi - 95W3214 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 1 A, 600 V, 9.3 Ohm, 10 V, 2 V Rohs Compliant Onsemi
95W3214
Power Mosfet, N Channel, 1 A, 600 V, 9.3 Ohm, 10 V, 2 V Rohs Compliant Onsemi 95W3214
Power MOSFET, N Channel, 1 A, 600 V, 9.3 ohm, 10 V, 2 V RoHS Compliant: Yes

Power MOSFET, N Channel, 1 A, 600 V, 9.3 ohm, 10 V, 2 V RoHS Compliant: Yes

Supplier's Site Datasheet
Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R - 598-FQD1N60CTM - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R
598-FQD1N60CTM
Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R 598-FQD1N60CTM
Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R

Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067397-FQD1N60CTM FQD1N60CTM FQD1N60CTMTR-ND FQD1N60CTM FQD1N60CTM 95W3214 598-FQD1N60CTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTM Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Power Mosfet, N Channel, 1 A, 600 V, 9.3 Ohm, 10 V, 2 V Rohs Compliant Onsemi Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts 600 volts
PD 2500 to 28000 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
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