onsemi Single FETs, MOSFETs FQD1N60CTM

Description
N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQD1N60CTMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD1N60CTMTR-ND
Single FETs, MOSFETs FQD1N60CTMTR-ND
N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA

N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTM - 067397-FQD1N60CTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTM
067397-FQD1N60CTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTM 067397-FQD1N60CTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067397-FQD1N60CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 6.2nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 11.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067397-FQD1N60CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 6.2nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 11.5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FQD1N60CTM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD1N60CTM
Single FETs, MOSFETs FQD1N60CTM
MOSFET N-CH 600V 1A DPAK

MOSFET N-CH 600V 1A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD1N60CTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD1N60CTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD1N60CTM
MOSFET N-CH 600V 1A DPAK

MOSFET N-CH 600V 1A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH/600V/1A/ QFET C-Series

MOSFET N-CH/600V/1A/ QFET C-Series

Buy Now Datasheet
Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R - 598-FQD1N60CTM - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R
598-FQD1N60CTM
Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R 598-FQD1N60CTM
Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R

Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R

Supplier's Site
Power Mosfet, N Channel, 1 A, 600 V, 9.3 Ohm, 10 V, 2 V Rohs Compliant Onsemi - 95W3214 - Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 1 A, 600 V, 9.3 Ohm, 10 V, 2 V Rohs Compliant Onsemi
95W3214
Power Mosfet, N Channel, 1 A, 600 V, 9.3 Ohm, 10 V, 2 V Rohs Compliant Onsemi 95W3214
Power MOSFET, N Channel, 1 A, 600 V, 9.3 ohm, 10 V, 2 V RoHS Compliant: Yes

Power MOSFET, N Channel, 1 A, 600 V, 9.3 ohm, 10 V, 2 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET
Product Number FQD1N60CTMTR-ND 067397-FQD1N60CTM FQD1N60CTM FQD1N60CTM FQD1N60CTM 598-FQD1N60CTM 95W3214
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTM Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R Power Mosfet, N Channel, 1 A, 600 V, 9.3 Ohm, 10 V, 2 V Rohs Compliant Onsemi
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
V(BR)DSS 600 volts 600 volts 600 volts
PD 2500 to 28000 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data