onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTF FQD1N60CTF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039706-FQD1N60CTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 6.2nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 11.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039706-FQD1N60CTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 6.2nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 11.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTF - 1039706-FQD1N60CTF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTF
1039706-FQD1N60CTF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTF 1039706-FQD1N60CTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039706-FQD1N60CTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 6.2nC @ 10V Max Input Capacitance: 170pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 11.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039706-FQD1N60CTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 6.2nC @ 10V
Max Input Capacitance: 170pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 11.5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD1N60CTF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD1N60CTF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD1N60CTF
MOSFET N-CH 600V 1A DPAK

MOSFET N-CH 600V 1A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039706-FQD1N60CTF FQD1N60CTF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD1N60CTF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 2500 to 28000 milliwatts
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