N-Channel 100V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA
N-Channel 100V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA
N-Channel 100V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA
MOSFET N-CH 100V 15.6A DPAK
POWER FIELD-EFFECT TRANSISTOR, 1
MOSFETs 100V N-Ch QFET Logic Level Product overview: FQD19N10LTM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD19N10LTM can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 104394-FQD19N10LTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 15.6A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 18nC @ 5V
Max Input Capacitance: 870pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 7.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET, N CH, 100V, 15.6A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:15.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 15.6A I(D), 100V, 0.11OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. FREE 2 YEAR RADWELL WARRANTY
MOSFET 100V N-Ch QFET Logic Level
MOSFET N-CH 100V 15.6A DPAK
| RS Components, Ltd. | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 6710970 | 6710970P | FQD19N10LTMDKR-ND | FQD19N10LTM | 2088-FQD19N10LTM | 104394-FQD19N10LTM | 31Y1525 | 49272348 | FQD19N10LTM | FQD19N10LTM |
| Product Name | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | 100V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD19N10LTM | Mosfet, N Ch, 100V, 15.6A, To-252Aa-3; Channel Type Onsemi | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| Package Type | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | Reel | SOT3; TO-252 (DPAK); D-Pak | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | ||
| Number of units in IC | 1 | |||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
