MOSFET P-CH 60V 12A DPAK
MOSFETs 60V P-Channel QFET Product overview: FQD17P06TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD17P06TM can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067396-FQD17P06TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 900pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 135 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
P-Channel 60V 12A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA
P-Channel 60V 12A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA
P-Channel 60V 12A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount TO-252AA
MOSFET, P-CHANNEL, -60V, -12A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes
P CHANNEL MOSFET, -60V, 12mA, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
(PRICE/TC),MOSFET, P-CHANNEL, -60V, -12A, TO-252-3, TRANSISTOR POLARITY:P CHANNEL, CONTINUOUS DRAIN CURRENT ID:-12A, DRAIN SOURCE VOLTAGE VDS:-60V, ON RESISTANCE RDS(ON):0.11OHM, RDS(ON) TEST VOLTAGE VGS:-10V, THRESHOLD VOLTAGE VGS:-4V, POWER ROHS COMPLIA. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-CH 60V 12A DPAK
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQD17P06TM | 2088-FQD17P06TM | 6710968 | 6710968P | 067396-FQD17P06TM | FQD17P06TMTR-ND | 84Y9965 | 82C4027 | 21491232 | FQD17P06TM | FQD17P06TM |
| Product Name | Single FETs, MOSFETs | P-Channel 60V MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD17P06TM | Single FETs, MOSFETs | Mosfet, P-Channel, -60V, -12A, To-252-3; Transistor Polarity Onsemi | P Channel Mosfet, -60V, 12Ma, Full Reel; Channel Type Onsemi | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 60 volts | 60 volts | |||||||||
| IDSS | 12000 milliamps | -12000 milliamps | 12 milliamps | ||||||||
| PD | 2500 milliwatts | 2.5 milliwatts | 2500 to 44000 milliwatts |
