onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB65N06 FQB65N06

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067386-FQB65N06 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 65A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 2410pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 16 mOhm @ 32.5A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067386-FQB65N06 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 65A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 2410pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 16 mOhm @ 32.5A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB65N06 - 067386-FQB65N06 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB65N06
067386-FQB65N06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB65N06 067386-FQB65N06
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067386-FQB65N06 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 65A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 2410pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 16 mOhm @ 32.5A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067386-FQB65N06
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 65A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 2410pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 16 mOhm @ 32.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067386-FQB65N06
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB65N06
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 3750 to 150000 milliwatts
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