onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4N60TM FQB4N60TM

Description
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1059659-FQB4N60TM Packaging: Tape & Reel Mounting: SMD (SMT) Power Dissipation: 3.13 W Number of Pins: 3 Rise Time: 45 ns Fall Time: 35 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: D2PAK Popularity: Low Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Single Turn-On Delay Time: 13 ns Continuous Drain Current (ID): 4.4 A Drain to Source Breakdown Voltage: 600 V Turn-Off Delay Time: 25 ns Drain to Source Resistance: 2.2 Ω Gate to Source Voltage (Vgs): 30 V
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Description
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1059659-FQB4N60TM Packaging: Tape & Reel Mounting: SMD (SMT) Power Dissipation: 3.13 W Number of Pins: 3 Rise Time: 45 ns Fall Time: 35 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: D2PAK Popularity: Low Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Single Turn-On Delay Time: 13 ns Continuous Drain Current (ID): 4.4 A Drain to Source Breakdown Voltage: 600 V Turn-Off Delay Time: 25 ns Drain to Source Resistance: 2.2 Ω Gate to Source Voltage (Vgs): 30 V
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4N60TM - 1059659-FQB4N60TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4N60TM
1059659-FQB4N60TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4N60TM 1059659-FQB4N60TM
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1059659-FQB4N60TM Packaging: Tape & Reel Mounting: SMD (SMT) Power Dissipation: 3.13 W Number of Pins: 3 Rise Time: 45 ns Fall Time: 35 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: D2PAK Popularity: Low Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Element Configuration: Single Turn-On Delay Time: 13 ns Continuous Drain Current (ID): 4.4 A Drain to Source Breakdown Voltage: 600 V Turn-Off Delay Time: 25 ns Drain to Source Resistance: 2.2 Ω Gate to Source Voltage (Vgs): 30 V

Manufacturer: Fairchild/ON Semiconductor
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1059659-FQB4N60TM
Packaging: Tape & Reel
Mounting: SMD (SMT)
Power Dissipation: 3.13 W
Number of Pins: 3
Rise Time: 45 ns
Fall Time: 35 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: D2PAK
Popularity: Low
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Element Configuration: Single
Turn-On Delay Time: 13 ns
Continuous Drain Current (ID): 4.4 A
Drain to Source Breakdown Voltage: 600 V
Turn-Off Delay Time: 25 ns
Drain to Source Resistance: 2.2 Ω
Gate to Source Voltage (Vgs): 30 V

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1059659-FQB4N60TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4N60TM
Package Type SOT3; D2PAK
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