MOSFET N-CH 400V 10.5A D2PAK
N-Channel 400V 10.5A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016414-FQB11N40CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 135W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 10.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1090pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 530 mOhm @ 5.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Quantity per package: 800
MOSFET, N-CH, 400V, 10.5A, 150DEG C/135W ROHS COMPLIANT: YES
MOSFET N-CH 400V 10.5A D2PAK
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N-Channel 400 V 0.5 Ohm Surface Mount Mosfet - D2PAK-3
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQB11N40CTM | FQB11N40CTMTR-ND | 016414-FQB11N40CTM | 54AH8746 | FQB11N40CTM | FQB11N40CTM | 598-FQB11N40CTM |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB11N40CTM | Mosfet, N-Ch, 400V, 10.5A, 150Deg C/135W Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N-Channel 400 V 0.5 Ohm Surface Mount Mosfet - D2PAK-3 |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||
| V(BR)DSS | 400 volts | 400 volts | 400 volts | ||||
| IDSS | 10500 milliamps | ||||||
| PD | 135000 milliwatts | 135000 milliwatts | 135000 milliwatts |
