onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB11N40CTM FQB11N40CTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016414-FQB11N40CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 10.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1090pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 530 mOhm @ 5.25A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB11N40CTM - 016414-FQB11N40CTM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQB11N40CTMTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQB11N40CTM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N-Ch, 400V, 10.5A, 150Deg C/135W Rohs Compliant Onsemi - 54AH8746 - Newark, An Avnet Company
    Newark, An Avnet Company
  • N-Channel 400 V 0.5 Ohm Surface Mount Mosfet - D2PAK-3 - 598-FQB11N40CTM - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB11N40CTM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016414-FQB11N40CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 10.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1090pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 530 mOhm @ 5.25A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB11N40CTM - 016414-FQB11N40CTM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB11N40CTM
016414-FQB11N40CTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB11N40CTM 016414-FQB11N40CTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016414-FQB11N40CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 10.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1090pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 530 mOhm @ 5.25A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016414-FQB11N40CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 135W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 10.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1090pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 530 mOhm @ 5.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FQB11N40CTMTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB11N40CTMTR-ND
Single FETs, MOSFETs FQB11N40CTMTR-ND
N-Channel 400V 10.5A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 400V 10.5A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FQB11N40CTM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQB11N40CTM
Single FETs, MOSFETs FQB11N40CTM
MOSFET N-CH 400V 10.5A D2PAK

MOSFET N-CH 400V 10.5A D2PAK

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQB11N40CTM
MOSFET FQB11N40CTM
MOSFET 400V N-Channel Adv Q-FET C-Series

MOSFET 400V N-Channel Adv Q-FET C-Series

Buy Now Datasheet
Mosfet, N-Ch, 400V, 10.5A, 150Deg C/135W Rohs Compliant Onsemi - 54AH8746 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 400V, 10.5A, 150Deg C/135W Rohs Compliant Onsemi
54AH8746
Mosfet, N-Ch, 400V, 10.5A, 150Deg C/135W Rohs Compliant Onsemi 54AH8746
MOSFET, N-CH, 400V, 10.5A, 150DEG C/135W ROHS COMPLIANT: YES

MOSFET, N-CH, 400V, 10.5A, 150DEG C/135W ROHS COMPLIANT: YES

Supplier's Site Datasheet
N-Channel 400 V 0.5 Ohm Surface Mount Mosfet - D2PAK-3 - 598-FQB11N40CTM - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
N-Channel 400 V 0.5 Ohm Surface Mount Mosfet - D2PAK-3
598-FQB11N40CTM
N-Channel 400 V 0.5 Ohm Surface Mount Mosfet - D2PAK-3 598-FQB11N40CTM
N-Channel 400 V 0.5 Ohm Surface Mount Mosfet - D2PAK-3

N-Channel 400 V 0.5 Ohm Surface Mount Mosfet - D2PAK-3

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB11N40CTM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB11N40CTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB11N40CTM
MOSFET N-CH 400V 10.5A D2PAK

MOSFET N-CH 400V 10.5A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 016414-FQB11N40CTM FQB11N40CTMTR-ND FQB11N40CTM FQB11N40CTM 54AH8746 598-FQB11N40CTM FQB11N40CTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB11N40CTM Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 400V, 10.5A, 150Deg C/135W Rohs Compliant Onsemi N-Channel 400 V 0.5 Ohm Surface Mount Mosfet - D2PAK-3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 400 volts 400 volts 400 volts
PD 135000 milliwatts 135000 milliwatts 135000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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